For both planar and Trench MOSFETs, on-resistance is important because it determines the power loss and heating of the power semiconductor. The lower the on-resistance the lower the device power loss and the cooler it will operate. This is particularly important in applications where the nominal operating temperatures usually exceed 125°C. In general - Yes, but Nexperia Trench MOSFETs are designed to suppress this effect. The trench structure, unlike planar, can be very easily designed to suppress parasitic turn on of the BJT. For new Nexperia MOSFET technologies, the failure mechanism is thermal, which represents the limit of achievable UIS performance.
From this point, we discuss super-junction MOSFETs, which in recent years have become representative of MOSFETs with high voltages.
Features and Positioning of Power Transistors
Let us begin by reviewing the power and frequency ranges covered by the principal power transistors of recent years, which are Si-MOSFETs, IGBTs, and SiC-MOSFETs. Hereafter we will be focusing on super-junction MOSFETs, but it will be useful to understand the position of Si-MOSFETs in the market in order to be able to understand how they are used selectively according to their features and characteristics.
The following graphic illustrates the power and frequency regions that can be handled by the different types of power transistors. We see that Si-MOSFETs lag behind IGBTs and SiC-MOSFETs somewhat with respect to ON-resistance and rated voltage, but are well-suited to high-speed operation at lower to intermediate power levels.
Planar MOSFET and Super-junction MOSFET
Si-MOSFETs can be classified as planar MOSFETs and super-junction MOSFETs according to the manufacturing processes used. Put simply, in the field of power transistors, the super-junction structure was developed in order to transcend the limits of planar structures.
As indicated in the graphic below, a planar structure constitutes a flat or planar transistor. This structure has had the drawback that if the rated voltage is raised, the drift layer becomes thicker, and so the ON-resistance is increased. In contrast, a super-junction structure is a structure in which multiple vertical pn junctions are arranged, as a result of which a low ON-resistance RDS(ON) and reduced gate charge Qg are realized while maintaining a high voltage.
In addition, the reverse current irr and the reverse recovery time trr of the internal diode are parameters that need to be studied for the turn-off switching characteristics of a transistor. As indicated in the waveform diagram below, in essence a super-junction MOSFET has a larger pn junction area than a planar MOSFET, and so trr is faster than for a planar MOSFET, but a larger irr flows.
This characteristic, one issue with super-junction MOSFETs, is steadily undergoing improvement, and such features as fast operation and low noise endow super-junction MOSFETs with considerable variety. In the following sections, we will review features for a variety of MOSFETs.
・Si-MOSFETs are positioned as elements capable of fast operation at low to intermediate power levels.
・The super-junction structure achieves a lower ON-resistance RDS(ON) and reduced gate charge Qg, while maintaining a high voltage.
・A super-junction MOSFET has a characteristic that irr is larger and trr is faster than for a planar MOSFET.
DUBLIN--(BUSINESS WIRE)--The 'Super Junction MOSFET Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2020-2025' report has been added to ResearchAndMarkets.com's offering.
The global super junction MOSFET market grew at a CAGR of around 13% during 2014-2019. Looking forward, the publisher expects the global super junction MOSFET market to continue its strong growth during the next five years.
Super junction metal-oxide semiconductor field-effect transistors (MOSFETs) refer to various power semiconductor components and a new technology for high-voltage and high-frequency applications. They are manufactured using the multi-epitaxial growth and deep trench technologies and are widely used in the production of electronics that require high power density and system reliability and efficiency. These electronics include servers, computing devices, industrial power supply components, solar inverters, lighting and consumer electronics. In comparison to the traditionally used planar silicon MOSFETs, the super junction MOSFETs have significantly lower conduction and switching losses. They are also utilized in the development of green power management systems in residential and commercial complexes to curb power losses.
The rising demand for electrical systems with high energy efficiencies is one of the key factors driving the growth of the market. Furthermore, widespread product adoption for manufacturing automobile electronic components is also providing a boost to the market growth. Automobile batteries are mounted with super junction MOSFET to improve fuel efficiency, create more cabin space and enhance the comfort of passengers. In line with this, the miniaturization of power adaptors and power supplies is also positively impacting the product demand.
In addition to this, various technological advancements, such as the development of second-generation super junction MOSFETs with minimal conduction loss, suppressed watt loss under light loads and improved reverse recovery, are also creating a positive outlook for the market. Other factors, including the increasing utilization of renewable energy resource-based power supplies, along with extensive research and development (R&D) activities, are projected to drive the market further.
Companies Mentioned
Key Questions Answered in This Report:
Key Topics Covered:
1 Preface
2 Scope and Methodology
2.1 Objectives of the Study
2.2 Stakeholders
2.3 Data Sources
2.3.1 Primary Sources
2.3.2 Secondary Sources
2.4 Market Estimation
2.4.1 Bottom-Up Approach
2.4.2 Top-Down Approach
2.5 Forecasting Methodology
3 Executive Summary
4 Introduction
4.1 Overview
4.2 Key Industry Trends
5 Global Super Junction MOSFET Market
5.1 Market Overview
5.2 Market Performance
5.3 Impact of COVID-19
5.4 Market Forecast
6 Market Breakup by Type
6.1 High Voltage Super Junction MOSFET
6.1.1 Market Trends
6.1.2 Market Forecast
6.2 Low Voltage Super Junction MOSFET
6.2.1 Market Trends
6.2.2 Market Forecast
7 Market Breakup by Technology
7.1 Conventional Power MOSFET
7.1.1 Market Trends
7.1.2 Market Forecast
7.2 Multiple Epitaxy Technology
7.2.1 Market Trends
7.2.2 Market Forecast
7.3 Deep Trench Technology
7.3.1 Market Trends
7.3.2 Market Forecast
8 Market Breakup by Material
8.1 Substrate Material
8.1.1 Market Trends
8.1.2 Market Forecast
8.2 Transition/Oxide Layer
8.2.1 Market Trends
8.2.2 Market Forecast
8.3 Electrode Material
8.3.1 Market Trends
8.3.2 Market Forecast
8.4 Others
8.4.1 Market Trends
8.4.2 Market Forecast
9 Market Breakup by Application
9.1 Lighting Supply
9.1.1 Market Trends
9.1.2 Market Forecast
9.2 Power Supply
9.2.1 Market Trends
9.2.2 Market Forecast
9.3 Display Devices
9.3.1 Market Trends
9.3.2 Market Forecast
9.4 Others
9.4.1 Market Trends
9.4.2 Market Forecast
10 Market Breakup by Region
10.1 North America
10.2 Asia Pacific
10.3 Europe
10.4 Latin America
10.5 Middle East and Africa
11 SWOT Analysis
12 Value Chain Analysis
13 Porters Five Forces Analysis
14 Price Analysis
15 Competitive Landscape
15.1 Market Structure
15.2 Key Players
15.3 Profiles of Key Players
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